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Science 28 January 2000:
Vol. 287. no. 5453, pp. 633 - 636
DOI: 10.1126/science.287.5453.633
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Reports

Quantum-Critical Conductivity Scaling for a Metal-Insulator Transition

H.-L. Lee, 1 John P. Carini, 1* David V. Baxter, 1 W. Henderson, 2 G. Grüner 2

Temperature (T)- and frequency (omega )-dependent conductivity measurements are reported here in amorphous niobium-silicon alloys with compositions (x) near the zero-temperature metal-insulator transition. There is a one-to-one correspondence between the frequency- and temperature-dependent conductivity on both sides of the critical concentration, thus establishing the quantum-critical nature of the transition. The analysis of the conductivity leads to a universal scaling function and establishes the critical exponents. This scaling can be described by an x-, T-, and omega -dependent characteristic length, the form of which is derived by experiment.

1 Department of Physics, Indiana University, Bloomington, IN 47405, USA.
2 Department of Physics, University of California, Los Angeles, CA 90095-1547, USA.
*   To whom correspondence should be addressed. E-mail: jcarini{at}indiana.edu

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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Quantum Criticality: Competing Ground States in Low Dimensions.
S. Sachdev (2000)
Science 288, 475-480
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Science. ISSN 0036-8075 (print), 1095-9203 (online)