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Science 21 May 1999:
Vol. 284. no. 5418, pp. 1335 - 1337
DOI: 10.1126/science.284.5418.1335
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Reports

Large Magnetoresistance of Electrodeposited Single-Crystal Bismuth Thin Films

F. Y. Yang, 1 Kai Liu, 1 Kimin Hong, 1 D. H. Reich, 1 P. C. Searson, 2 C. L. Chien 1*

Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 percent at 200 oersted and a field sensitivity of 0.2 percent magnetoresistance per oersted at room temperature.

1 Department of Physics and Astronomy,
2 Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218, USA.
*   To whom correspondence should be addressed.

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Science. ISSN 0036-8075 (print), 1095-9203 (online)