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Science 14 August 1998:
Vol. 281. no. 5379, pp. 969 - 971
DOI: 10.1126/science.281.5379.969

Reports

Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals

R. Lee Penn, Jillian F. Banfield *

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

R. L. Penn, Materials Science Program, University of Wisconsin-Madison, Madison, WI 53706, USA. J. F. Banfield, Mineralogical Institute, Graduate School of Science, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan. E-mail: jill{at}min.s.u-tokyo.ac.jp
*   To whom correspondence should be addressed. Permanent address: Department of Geology and Geophysics, University of Wisconsin-Madison, Madison, WI 53706, USA.


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