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Science 14 August 1998: Vol. 281. no. 5379, pp. 969 - 971 DOI: 10.1126/science.281.5379.969
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Reports
Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals
R. Lee Penn,
Jillian F. Banfield
*
Dislocations are common defects in solids, yet all crystals begin
as dislocation-free nuclei. The mechanisms by which dislocations form
during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific
surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw
dislocations provides a mechanism for generating complex polytypic and
polymorphic structures. These results are of fundamental importance to
understanding crystal growth.
R. L. Penn, Materials Science Program, University of
Wisconsin-Madison, Madison, WI 53706, USA. J. F. Banfield,
Mineralogical Institute, Graduate School of Science, University of
Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan. E-mail:
jill{at}min.s.u-tokyo.ac.jp
*
To whom correspondence should be addressed. Permanent address:
Department of Geology and Geophysics, University of Wisconsin-Madison, Madison, WI 53706, USA.
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