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Science 10 April 1998: Vol. 280. no. 5361, pp. 262 - 264 DOI: 10.1126/science.280.5361.262
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Reports
Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects
L. Landin,
M. S. Miller,
*
M.-E. Pistol,
C. E. Pryor,
L. Samuelson
Optical emission from individual strained indium arsenide (InAs)
islands buried in gallium arsenide (GaAs) was studied. At low
excitation power density, the spectra from these quantum dots consist
of a single line. At higher excitation power density, additional
emission lines appeared at both higher and lower energies, separated
from the main line by about 1 millielectron volt. At even higher
excitation power density, this set of lines was replaced by a broad
emission peaking below the original line. The splittings were an order
of magnitude smaller than the lowest single-electron or single-hole
excited state energies, indicating that the fine structure results from
few-particle interactions in the dot. Calculations of few-particle
effects give splittings of the observed magnitude.
Department of Solid State Physics, Lund University, Box 118, S-221
00 Lund, Sweden.
*
Present address: Department of Electrical Engineering, University
of Virginia, Thornton Hall, Charlottesville, VA 22903-2442, USA.
To whom correspondence should be addressed. E-mail:
mats-erik.pistol{at}ftf.lth.se
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