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Science 10 April 1998:
Vol. 280. no. 5361, pp. 262 - 264
DOI: 10.1126/science.280.5361.262

Reports

Optical Studies of Individual InAs Quantum Dots in GaAs: Few-Particle Effects

L. Landin, M. S. Miller, * M.-E. Pistol, dagger C. E. Pryor, L. Samuelson

Optical emission from individual strained indium arsenide (InAs) islands buried in gallium arsenide (GaAs) was studied. At low excitation power density, the spectra from these quantum dots consist of a single line. At higher excitation power density, additional emission lines appeared at both higher and lower energies, separated from the main line by about 1 millielectron volt. At even higher excitation power density, this set of lines was replaced by a broad emission peaking below the original line. The splittings were an order of magnitude smaller than the lowest single-electron or single-hole excited state energies, indicating that the fine structure results from few-particle interactions in the dot. Calculations of few-particle effects give splittings of the observed magnitude.

Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden.
*   Present address: Department of Electrical Engineering, University of Virginia, Thornton Hall, Charlottesville, VA 22903-2442, USA.

dagger    To whom correspondence should be addressed. E-mail: mats-erik.pistol{at}ftf.lth.se


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THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
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Coherent Optical Control of the Quantum State of a Single Quantum Dot.
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Self-Organized Growth of Three- Dimensional Quantum-Dot Crystals with fcc-Like Stacking and a Tunable Lattice Constant.
G. Springholz, V. Holy, M. Pinczolits, and G. Bauer (1998)
Science 282, 734-737
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Science. ISSN 0036-8075 (print), 1095-9203 (online)