Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
S. Mathews,
R. Ramesh,
T. Venkatesan,
J. Benedetto
Ferroelectric field effect devices offer the possibility of
nonvolatile active memory elements. Doped rare-earth manganates, which
are usually associated with colossal magnetoresistive properties, have
been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be "tuned" by varying the manganate stochiometry. A device with
La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the
ferroelectric gate exhibited a modulation in channel conductance of at
least a factor of 3 and a retention loss of 3 percent after 45 minutes
without power.
S. Mathews, Department of Materials and Nuclear Engineering,
University of Maryland, College Park, MD 20742, USA.
R. Ramesh, Department of Materials and Nuclear Engineering and Center
for Superconductivity Research, University of Maryland, College Park,
MD 20742, USA.
T. Venkatesan, Center for Superconductivity Research, University of
Maryland, College Park, MD 20742, USA.
J. Benedetto, Army Research Laboratory, Adelphi, MD 20783-1197, USA.
