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A Silicon Single-Electron Transistor Memory Operating at Room Temperature
Lingjie Guo,
Effendi Leobandung,
Stephen
Y. Chou*
A single-electron memory, in which a bit of information is stored
by one electron, is demonstrated at room temperature. Thememory is a
floating gate metal-oxide-semiconductor transistorin silicon with a
channel width (~10 nanometers) smaller thanthe Debye screening
length of a single electron and a nanoscalepolysilicon dot (~7
nanometers by 7 nanometers) as the floatinggate embedded between the
channel and the control gate. Storingone electron on the floating gate
screens the entire channel fromthe potential on the control gate and
leads to (i) a discreteshift in the threshold voltage, (ii) a
staircase relation betweenthe charging voltage and the shift, and
(iii) a self-limitingcharging process. The structure and fabrication
of the memoryshould be compatible with future ultralarge-scale
integrated circuits.
Nanostructure Laboratory, Department of Electrical Engineering,
University of Minnesota, Minneapolis, MN 55455, USA.
*
To whom correspondence should be addressed. E-mail:
chou{at}ee.umn.edu
The editors suggest the following Related Resources on Science sites:
In Science Magazine
LETTERS
Stephen Y. Chou (4 July 1997) Science277 (5322), 17g.
[DOI: 10.1126/science.277.5322.17g] |Full Text »
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