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Science 15 December 1995:
Vol. 270. no. 5243, pp. 1791 - 1794
DOI: 10.1126/science.270.5243.1791
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Reports

Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth

Timothy J. Trentler,  Kathleen M. Hickman,  Subhash C. Goel,  Ann M. Viano,  Patrick C. Gibbons,  William E. Buhro (1)

Until now, micrometer-scale or larger crystals of the III-V semiconductors have not been grown at low temperatures for lack of suitable crystallization mechanisms for highly covalent nonmolecular solids. A solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (leq203°C), solution-phase reactions. The materials are produced as polycrystalline fibers or near-single-crystal whiskers having widths of 10 to 150 nanometers and lengths of up to several micrometers. This mechanism shows that processes analogous to vapor-liquid-solid growth can operate at low temperatures; similar synthesis routes for other covalent solids may be possible.


T. J. Trentler, K. M. Hickman, S. C. Goel, W. E. Buhro, Department of Chemistry, Washington University, St. Louis, MO 63130-4899, USA.
A. M. Viano and P. C. Gibbons, Physics Department, Washington University, St. Louis, MO 63130-4899, USA.
(1) To whom correspondence should be addressed.


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