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Science 28 July 1995:
Vol. 269. no. 5223, pp. 519 - 521
DOI: 10.1126/science.269.5223.519
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Articles

Direct Observation of Dislocation Core Structures in CdTe/GaAs(001)

A. J. McGibbon 1, S. J. Pennycook 1, and J. E. Angelo 2

1 Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6030, USA.
2 Sandia National Laboratories, Livermore, CA 94550, USA.

A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.

Submitted on February 8, 1995
Accepted on May 31, 1995


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