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Science 21 July 1995:
Vol. 269. no. 5222, pp. 373 - 376
DOI: 10.1126/science.269.5222.373
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Articles

Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO2/Pb(Zr0.52Ti0.48)O3 Heterostructures

C. H. Ahn 1, J. -M. Triscone 2, N. Archibald 3, M. Decroux 2, R. H. Hammond 1, T. H. Geballe 1, Ø. Fischer 2, and M. R. Beasley 1

1 Department of Applied Physics, Stanford University, Stanford, CA 94305, USA.
2 Département de Physique de la Matière Condensée, University of Geneva, 24 Quai E.-Ansermet, 1211 Geneva 4, Switzerland
3 Department of Physics, Stanford University, Stanford, CA 94305, USA.

A ferroelectric field effect in epitaxial thin film SrCuO2/Pb(Zr0.52Ti0.48)O3 heterostructures was observed. A 3.5 percent change in the resistance of a 40 angstrom SrCuO2 layer (a parent high-temperature superconducting compound) was measured when the polarization field of the Pb(Zr0.52Ti0.48)O3 layer was reversed by the application of a pulse of small voltage (<5 volts). This effect, both reversible and nonvolatile, is attributed to the electric field-induced charge at the interface of SrCuO2 and Pb(Zr0.52Ti0.48)O3. This completely epitaxial thin film approach shows the possibility of making nonvolatile, low-voltage ferroelectric field effect devices for both applications and fundamental studies of field-induced doping in novel compounds like SrCuO2.

Submitted on April 17, 1995
Accepted on June 9, 1995


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Electrostatic Modulation of Superconductivity in Ultrathin GdBa2Cu3O7-x Films.
C. H. Ahn, S. Gariglio, P. Paruch, T. Tybell, L. Antognazza, and J. Triscone (1999)
Science 284, 1152-1155
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