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Science 16 June 1995:
Vol. 268. no. 5217, pp. 1590 - 1592
DOI: 10.1126/science.268.5217.1590
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Articles

Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

T. -C. Shen 1, C. Wang 1, G. C. Abeln 1, J. R. Tucker 1, J. W. Lyding 1, Ph. Avouris 2, and R. E. Walkup 2

1 Department of Electrical and Computer Engineering and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.
2 IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.

The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.

Submitted on January 25, 1995
Accepted on March 28, 1995


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