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Science 22 July 1994:
Vol. 265. no. 5171, pp. 502 - 506
DOI: 10.1126/science.265.5171.502
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Articles

Fabrication of Atomic-Scale Structures on Si(001) Surfaces

C. T. Salling 1 and M. G. Lagally 1

1 Materials Science and Engineering Department, University of Wisconsin-Madison, Madison, WI 53706, USA.

The scanning tunneling microscope has been used to define regular crystalline structures at room temperature by removing atoms from the silicon (001) surface. A single atomic layer can be removed to define features one atom deep and create trenches with ordered floors. Segments of individual dimer rows can be removed to create structures with atomically straight edges and with lateral features as small as one dimer wide. Conditions under which such removal is possible are defined, and a mechanism is proposed.

Submitted on March 25, 1994
Accepted on June 6, 1994

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Science. ISSN 0036-8075 (print), 1095-9203 (online)