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Science 10 December 1993:
Vol. 262. no. 5140, pp. 1703 - 1706
DOI: 10.1126/science.262.5140.1703
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Articles

Manipulating Chlorine Atom Bonding on the Si(100)-(2 x 1) Surface with the STM

John J. Boland 1

1 IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

Chlorine atoms strongly chemisorbed at dangling bond sites on the Si(100)-(2 x 1) surface are observed by scanning tunneling microscopy (STM) to hop between adjacent sites. The origin of this behavior is suggested to be an interaction between the field of the probe tip and the dipole moment of the silicon—chlorine bond. Chlorine atom migration is shown to be facilitated by the presence of a metastable chlorine bridge—bonded minimum. The STM probe was used to excite single chlorine atoms into this bridging configuration, resulting in a local population inversion. Selective application of voltage pulses between the probe tip and the surface rearranged the local bonding and induced transformations between different types of chlorine sites. In this manner, adsorbed species can be dissected and their composition and structure directly probed.

Submitted on July 9, 1993
Accepted on October 8, 1993


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Dangling Bond Dynamics on the Silicon (100)-2×1 Surface: Dissociation, Diffusion, and Recombination.
M. McEllistrem, M. Allgeier, and J. J. Boland (1998)
Science 279, 545-548
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