Electrical Resistivity and Stoichiometry of Kkhgr C60 Films

doi:10.1126/science.255.5041.184

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Science 10 January 1992:
Vol. 255. no. 5041, pp. 184 - 186
DOI: 10.1126/science.255.5041.184

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Electrical Resistivity and Stoichiometry of K C₆₀ Films

G. P. KOCHANSKI ¹, A. F. HEBARD ¹, R. C. HADDON ¹, and A. T. FIORY ¹

¹ AT&T Bell Laboratories, Murray Hill, NJ 07974

Electrical resistances of polycrystalline fullerene (C₆₀) filmswere monitored while the films were being doped in ultrahighvacuum with potassium from a molecular-beam effusion source.Temperature- and concentration-dependent resistivities of KC₆₀ films in equilibrium near room temperature were measured.The resistance changes smoothly from metallic at $khgr$ $ap$ 3 to activatedas $khgr$ $rarr$ = 0 or $khgr$ $rarr$ 6. The minimum resistivity for K₃C₆₀ films is2.2 microohm-centimeters, near the Mott limit. The resistivitiesare interpreted in terms of a granular microstructure whereK₃C₆₀ regions form nonpercolating grains, except perhaps at $khgr$ $ap$ 3. Stoichiometries at the resistivity extrema were determinedby ex situ Rutherford backscattering spectrometry to be $khgr$ = 3± 0.05 at the resistance minimum and $khgr$ = 6 ± 0.05 atthe fully doped resistance maximum.

Submitted on September 19, 1991
Accepted on November 7, 1991

THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:

Electrical Resistivity and Stoichiometry of CaxC60 and SrxC60 Films.: R. C. Haddon, G. P. Kochanski, A. F. Hebard, A. T. Fiory, and R. C. Morris (1992)
Science 258, 1636-1638
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