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Science 31 May 1991:
Vol. 252. no. 5010, pp. 1290 - 1293
DOI: 10.1126/science.1925540
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Articles

Science, Vol 252, Issue 5010, 1290-1293
Copyright © 1991 by American Association for the Advancement of Science

articles

A neuron-silicon junction: a Retzius cell of the leech on an insulated-gate field-effect transistor

P Fromherz, A Offenhausser, T Vetter, and J Weis

Abteilung Biophysik der Universitat Ulm, Germany.

An identified neuron of the leech, a Retzius cell, has been attached to the open gate of a p-channel field-effect transistor. Action potentials, spontaneous or stimulated, modulate directly the source-drain current in silicon. The electronic signals match the shape of the action potential. The average voltage on the gate was up to 25 percent of the intracellular voltage change. Occasionally weak signals that resemble the first derivative of the action potential were observed. The junctions can be described by a model that includes capacitive coupling of the plasma membrane and the gate oxide and that accounts for variable resistance of the seal.


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