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Science 24 February 1989:
Vol. 243. no. 4894, pp. 1047 - 1050
DOI: 10.1126/science.243.4894.1047
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Articles

Epitaxial Growth of Diamond Films on Si(111) at Room Temperature by Mass-Selected Low-Energy C+ Beams

J. L. ROBERTSON 1, S. C. MOSS 1, Y. LIFSHITZ 2, S. R. KASI 2, J. W. RABALAIS 2, G. D. LEMPERT 3, and E. RAPOPORT 3

1 Department of Physics, University of Houston, Houston, Texas 77204-5504.
2 Department of Chemistry, University of Houston, Houston, Texas 77204-5641., Soreq Nuclear Research Center, Yavne 70600, Israel.
3 Soreq Nuclear Research Center, Yavne 70600, Israel.

Diamond films (sim0.7 micrometer thick) have been epitaxially grown on Si(111) substrates at room temperature with mass-selected 120-electronvolt C+ ions. The diamond reflections observed in x-ray diffraction are well localized at their predicted positions, indicating that (i) the diamond(111) and (220) planes are parallel to the Si(111) and (220), respectively; (ii) the diamond rotational spread around its (111) normal is sim1.7°; and (iii) the mosaic block size is sim150 Å. The film growth is discussed in terms of subplantation—a shallow subsurface implantation model. This discovery is an important step toward diamond semiconductor devices.

Submitted on November 2, 1988
Accepted on December 30, 1988


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Current Issues and Problems in the Chemical Vapor Deposition of Diamond.
W. A. Yarbrough and R. Messier (1990)
Science 247, 688-696
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