High-Resolution Electron Microscopy and Scanning Tunneling Microscopy of Native Oxides on Silicon
A. H. CARIM 1,
M. M. DOVEK 2,
C. F. QUATE 2,
R. SINCLAIR 1, and
C. VORST 3
1 Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
2 E. L. Ginzton Laboratory, Stanford University, Stanford, CA 94305.
3 Philips Research Laboratories Sunnyvale, Signetics Corporation, 811 East Arques Avenue, Sunnyvale, CA 94088.
High-resolution transmission electron microscopy and scanning tunneling microscopy have been combined to examine the structure of the thin "native" oxide that forms on silicon surfaces at room temperature. Differences in the cleaning procedures for silicon wafers may affect the morphology of this oxide and critically influence further processing on the silicon substrates. An etch that ended with a dip in hydrofluoric acid provided a thinner oxide and a lower interface step density than did a sulfuric peroxide treatment. The availability of complementary information from high-resolution transmission electron microscopy and scanning tunneling microscopy is discussed.
Submitted on April 6, 1987
Accepted on June 17, 1987
