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Science 11 October 1985:
Vol. 230. no. 4722, pp. 127 - 131
DOI: 10.1126/science.230.4722.127
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Articles

Strained-Layer Epitaxy of Germanium-Silicon Alloys

John C. Bean 1

1 Physics Research Division, AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974.

Despite the dominant position of silicon in semiconductor electronics, its use is ultimately limited by its incompatibility with other semiconducting materials. Strained-layer epitaxy overcomes problems of crystallographic compatibility and produces high-quality heterostructures of germanium-silicon layers on silicon. This opens the door to a range of electronic and photonic devices that are based on bandstructure physics.


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Science. ISSN 0036-8075 (print), 1095-9203 (online)