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Science 4 May 1979:
Vol. 204. no. 4392, pp. 461 - 468
DOI: 10.1126/science.204.4392.461
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Articles

Laser Annealing of Ion-Implanted Semiconductors

C. W. White 1, J. Narayan 1, and R. T. Young 1

1 Research staff members in the Solid State Division of the Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

The physical and electrical properties of ion-implanted silicon annealed with high-powered laser radiation are described. Particular emphasis is placed on the comparison of materials properties that can be achieved with laser annealing to those which can be achieved by conventional thermal annealing. Applications of these techniques to the fabrication of high-efficiency solar cells, and potential applications of this new technique to other materials areas are discussed.


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Laser Method for Synthesis and Processing of Continuous Diamond Films on Nondiamond Substrates.
J. NARAYAN, V. P. GODBOLE, and C. W. WHITE (1991)
Science 252, 416-418
   Abstract »    PDF »
Tailored Surface Modification by Ion Implantation and Laser Treatment.
S. T. Picraux and L. E. Pope (1984)
Science 226, 615-622
   Abstract »    PDF »


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Science. ISSN 0036-8075 (print), 1095-9203 (online)