Note to users. If you're seeing this message, it means that your browser cannot find this page's style/presentation instructions -- or possibly that you are using a browser that does not support current Web standards. Find out more about why this message is appearing, and what you can do to make your experience of our site the best it can be.

Science 1 June 1973:
Vol. 180. no. 4089, pp. 948 - 949
DOI: 10.1126/science.180.4089.948
Prev | Table of Contents | Next

Articles

Crystal Growth of Silicon and Germanium in Metal Films

G. Ottaviani 1, D. Sigurd 1, V. Marrello 1, J. O. McCaldin 1, and J. W. Mayer 1

1 California Institute of Technology, Pasadena 91109

Amorphous silicon in contact with silver films and amorphous germanium in contact with aluminum films form crystalline precipitates when heated to temperatures well below those at which any liquid phase is present. Crystallization occurs by an initial dissolution of the semiconductor into the metal filmsolvent followed by the growth of crystals out of the solvent.


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
The Biologic Basis for the Clinical Application of the Silicones: A Correlate to Their Biocompatibility.
M. B. Habal (1984)
Arch Surg 119, 843-848
   Abstract »    PDF »


To Advertise     Find Products

Science. ISSN 0036-8075 (print), 1095-9203 (online)