Memory Metamaterials
T. Driscoll,1,*
Hyun-Tak Kim,2
Byung-Gyu Chae,2
Bong-Jun Kim,2
Yong-Wook Lee,2,3
N. Marie Jokerst,4
S. Palit,4
D. R. Smith,4
M. Di Ventra,1
D. N. Basov1
The resonant elements that grant metamaterials their distinct
properties have the fundamental limitation of restricting their
useable frequency bandwidth. The development of frequency-agile
metamaterials has helped to alleviate these bandwidth restrictions
by allowing real-time tuning of the metamaterial frequency response.
We demonstrate electrically controlled persistent frequency
tuning of a metamaterial, which allows the lasting modification
of its response by using a transient stimulus. This work demonstrates
a form of memory capacitance that interfaces metamaterials with
a class of devices known collectively as memory devices.
2 Metal-Insulator Transition Lab, Electronics and Telecommunications Research Institute (ETRI), Daejeon 305-350, Republic of Korea.
3 School of Electrical and Engineering, Pukyong National University, Busan 608-739, Republic of Korea.
4 Center for Metamaterials and Integrated Plasmonics and Electrical and Computer Engineering Department, Duke University, Post Office Box 90291, Durham, NC 27708, USA.
* To whom correspondence should be addressed. E-mail: tdriscol{at}physics.ucsd.edu
