Note to users. If you're seeing this message, it means that your browser cannot find this page's style/presentation instructions -- or possibly that you are using a browser that does not support current Web standards. Find out more about why this message is appearing, and what you can do to make your experience of our site the best it can be.

Originally published in Science Express on 28 June 2007
Science 3 August 2007:
Vol. 317. no. 5838, pp. 638 - 641
DOI: 10.1126/science.1144657
Prev | Table of Contents | Next

Reports

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

J. R. Williams,1 L. DiCarlo,2 C. M. Marcus2*

The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and Formula times the quantum of conductance, e2/h, consistent with recent theory. Beyond enabling investigations in condensed-matter physics, the demonstrated local-gating technique sets the foundation for a future graphene-based bipolar technology.

1 School of Engineering and Applied Science, Harvard University, Cambridge, MA 02138, USA.
2 Department of Physics, Harvard University, Cambridge, MA 02138, USA.

* To whom correspondence should be addressed. E-mail: marcus{at}harvard.edu

Read the Full Text


THIS ARTICLE HAS BEEN CITED BY OTHER ARTICLES:
Gate-Variable Optical Transitions in Graphene.
F. Wang, Y. Zhang, C. Tian, C. Girit, A. Zettl, M. Crommie, and Y. R. Shen (2008)
Science 320, 206-209
   Abstract »    Full Text »    PDF »
A self-consistent theory for graphene transport.
S. Adam, E. H. Hwang, V. M. Galitski, and S. Das Sarma (2007)
PNAS 104, 18392-18397
   Abstract »    Full Text »    PDF »
Quantized Transport in Graphene p-n Junctions in a Magnetic Field.
D. A. Abanin and L. S. Levitov (2007)
Science 317, 641-643
   Abstract »    Full Text »    PDF »


To Advertise     Find Products

Science. ISSN 0036-8075 (print), 1095-9203 (online)