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Published Online December 15, 2005
Science DOI: 10.1126/science.1121401

Reports

Submitted on October 17, 2005
Accepted on December 5, 2005

A Stretchable Form of Single-Crystal Silicon for Electronics on Elastomeric Substrates

Dahl-Young Khang 1, Hanqing Jiang 2, Young Huang 2*, John A. Rogers 3*

1 Department of Materials Science and Engineering; Beckman Institute for Advanced Science and Technology; Seitz Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801 USA.
2 Department of Mechanical and Industrial Engineering
3 Department of Materials Science and Engineering; Department of Mechanical and Industrial Engineering; Beckman Institute for Advanced Science and Technology; Seitz Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801 USA.

* To whom correspondence should be addressed.
Young Huang , E-mail: huang9{at}uiuc.edu
John A. Rogers , E-mail: jrogers{at}uiuc.edu

We have produced a stretchable form of silicon that consists of sub-micrometer single crystal elements structured into shapes with microscale periodic, wave-like geometries. When supported by an elastomeric substrate, this 'wavy' silicon can be reversibly stretched and compressed to large strains without damaging the silicon. The amplitudes and periods of the waves change to accommodate these deformations, thereby avoiding significant strains in the silicon itself. Dielectrics, patterns of dopants, electrodes and other elements directly integrated with the silicon yield fully formed, high performance 'wavy' metal oxide semiconductor field effect transistors, pn diodes and other devices for electronic circuits that can be stretched or compressed to similarly large levels of strain.


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