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Published Online March 13, 2003
Science DOI: 10.1126/science.1081940

Reports

Submitted on December 27, 2002
Accepted on March 4, 2003

Ultrahigh-Density Nanowire Lattices and Circuits

Nicholas A. Melosh 1, Akram Boukai 2, Frederic Diana 3, Brian Geradot 3, Antonio Badolato 3, Pierre M. Petrof 3, James R. Heath 1*

1 California Nanosystems Institute, University of California, Box 956905, Los Angeles, CA 90095, USA; California Institute of Technology, Pasadena, CA 91125, USA.
2 California Nanosystems Institute, University of California, Box 956905, Los Angeles, CA 90095, USA; California Institute of Technology, Pasadena, CA 91125, USA.
3 California Nanosystems Institute, University of California, Santa Barbara, CA 93106, USA.

* To whom correspondence should be addressed. E-mail: heath{at}caltech.edu.

We describe a general method for producing ultrahigh-density arrays of aligned metal and semiconductor nanowires and nanowire circuits, based upon translating vertical thickness control in thin film growth into lateral spatial patterns. Nanowire dimensions and pitches may be controlled, with near atomic precision, down to at least 8 nanometers and 16 nanometers, respectively. The nanowires have high aspect ratios (up to 106), and the process can be carried out multiple times to produce simple circuits of crossed nanowires with a nanowire junction density in excess of 1011 per square centimeter. The nanowires can also be utilized for nanomechanical devices, and a high-frequency nanomechanical resonator is demonstrated.


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Science. ISSN 0036-8075 (print), 1095-9203 (online)