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Published Online December 13, 2001
Science DOI: 10.1126/science.1066790

Reports

Submitted on October 3, 2001
Accepted on November 16, 2001

Electrically Driven Single Photon Source

Zhiliang Yuan 1, Beata E. Kardynal 1, R. Mark Stevenson 1, Andrew J. Shields 1, Charlene J. Lobo 2, Ken Cooper 2, Neil S. Beattie 3, David A. Ritchie 2, Michael Pepper 3

1 Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Milton Road, Cambridge, CB4 0WE, UK.
2 Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, UK.
3 Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Milton Road, Cambridge, CB4 0WE, UK; Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, UK.

Electroluminescence from a single quantum dot within the intrinsic region of a p-i-n junction is demonstrated to act as an electrically driven single photon source. At low injection currents the dot electroluminescence spectrum reveals a single sharp line due to exciton recombination, while another line due to the biexciton emerges at higher current. The second order correlation function of the diode displays anti-bunching under a DC drive current. Single photon emission is stimulated using sub-nanosecond voltage pulses. These results suggest that semiconductor technology can be used to mass-produce a single photon source for applications in quantum information technology.


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