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Published Online October 4, 2001
Science DOI: 10.1126/science.1065824

Reports

Submitted on August 29, 2001
Accepted on September 26, 2001

Logic Circuits with Carbon Nanotube Transistors

Adrian Bachtold 1, Peter Hadley 1, Takeshi Nakanishi 1, Cees Dekker 1*

1 Department of Applied Physics, Delft University of Technology, Lorentzweg 1, 2628 CG Delft, Netherlands.

* To whom correspondence should be addressed. E-mail: dekker{at}mb.tn.tudelft.nl.

We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>105), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate 1-, 2-, and 3-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory (SRAM) cell, and an ac ring oscillator.


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